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QPD1028

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Product Attribute	Attribute Value	Search Similar
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:	QPD1028
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	1.2 GHz to 1.4 GHz
Gain:	19.8 dB
Vds - Drain-Source Breakdown Voltage:	65 V
Id - Continuous Drain Current:	19 A
Output Power:	750 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	400 W
Mounting Style:	SMD/SMT
Package / Case:	NI-780
Brand:	Qorvo
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	QPD1028
	18
Subcategory:	Transistors

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